PART |
Description |
Maker |
MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
PTF210451E PTF210451F PTFA210451E |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
SKY77455 |
Front-End Module for LTE / EUTRAN Band I (Tx 1920-1980 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
ATR0786 |
ATR0786 [Updated 2/03. 12 Pages] High linearity active transmit mixer for 1800-2100 MHz High Linearity Active Transmit Mixer for 1800 MHz to 2100 MHz
|
ATMEL Corporation
|
T0785 |
High Linearity Active Transmit Mixer for 800 MHz to 1000 MHz
|
Atmel Corporation
|